Outline. Why select Class D Compare different device Simple Class D architecture Load-pull to give out Zout Matching and simulation results of ideal narrow band Class D PA Broad band matching.

Although it is very nonlinear, we still can use the LINC technique to kill the IMD product.

For high Power output, ----- BV(beake down voltage) the higher the better For high Gain, ----- the bigger the better For power dissipate,----- the small the better Compare the device(II) Conclusion: Also for the wide band application, we should chose the component whose Zout and Zin has very little variety in some frequency range.

I suggest to use the MRF282SR1.-----N-channel Enhancement-Mode Lateral MOSFETs Basic Class D PA architecture Load Pull to give out Zout Narrow band input and output matching and simulation results Wide band matching using coaxial A conventional design allows the coaxial transformer to transform the impedance to obtain a match the low end of the band, then add additional low-pass matching sections to lower the impedance at the upper band edge.

Using the MRF282S to simulate narrow band VMCD 300MHz Pushpull structure Narrow band matching (input, output) Narrow band simulation results Final schematic Final simulation results(1) Final simulation results(2) The problem remain: The Class D PA need a resonator tank to pull out the fundamental signal, to filter out the third time signal, so I decide to divide the band into 3 parts, one from 30 to 88 MHz; 88MHz to 200MHz; 200MHz to 500MHz.

For the real device, the Rs isnt very small, so the efficiency cant be so high.

Because of the, the Vds and some overlap with Ids, it also kill some efficiency.

To achieve better performance at low frequency band, I have to increase the Vgg.

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